TJ15S10M3 MOSFET Transistor

The TJ15S10M3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TJ15S10M3 transistor as follows.

TJ15S10M3 Transistor Specification

Transistor Code		TJ15S10M3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.13Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		69nC

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