TD357EG MOSFET Transistor

The TD357EG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TD357EG transistor as follows.

TD357EG Transistor Specification

Transistor Code		TD357EG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	74A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	56W
Drain-Source Capacitance		257pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		47nS

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