SUN1060I2 MOSFET Transistor

The SUN1060I2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SUN1060I2 transistor as follows.

SUN1060I2 Transistor Specification

Transistor Code		SUN1060I2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		154pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS

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