SUB75P03-07 MOSFET Transistor

The SUB75P03-07 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SUB75P03-07 transistor as follows.

SUB75P03-07 Transistor Specification

Transistor Code		SUB75P03-07
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	187W
Drain-Source Capacitance		1565pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		225nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		160nC

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