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SUB65P04-15 MOSFET Transistor

The SUB65P04-15 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SUB65P04-15 transistor as follows.

Circuit diagram symbol of the SUB65P04-15 transistor

SUB65P04-15 Transistor Specification

Transistor Code SUB65P04-15
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 65A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.015Ohm
Power Dissipation (Maximum) PD 120W
Drain-Source Capacitance 640pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 380nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 85nC

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