STY139N65M5 MOSFET Transistor

The STY139N65M5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STY139N65M5 transistor as follows.

STY139N65M5 Transistor Specification

Transistor Code		STY139N65M5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MAX247
Transistor SMD Code		139N65M5
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	130A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.017Ohm
Power Dissipation (Maximum)	PD	625W
Drain-Source Capacitance		365pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		56nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		363nC

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