STY105NM50N MOSFET Transistor

The STY105NM50N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STY105NM50N transistor as follows.

STY105NM50N Transistor Specification

Transistor Code		STY105NM50N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MAX247
Transistor SMD Code		105NM50N
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	625W
Drain-Source Capacitance		500pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		88nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		326nC

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