STY100NM60N MOSFET Transistor

The STY100NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STY100NM60N transistor as follows.

STY100NM60N Transistor Specification

Transistor Code		STY100NM60N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MAX247
Transistor SMD Code		100NM60N
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	98A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.029Ohm
Power Dissipation (Maximum)	PD	625W
Drain-Source Capacitance		850pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		52nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		330nC

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