STW9NA80 MOSFET Transistor

The STW9NA80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STW9NA80 transistor as follows.

STW9NA80 Transistor Specification

Transistor Code		STW9NA80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	190W
Drain-Source Capacitance		290pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS
Gate-Threshold Voltage (Maximum)		3.75V
Total Gate Charge		115nC

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