STW8NB100 MOSFET Transistor

The STW8NB100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STW8NB100 transistor as follows.

STW8NB100 Transistor Specification

Transistor Code		STW8NB100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.45Ohm
Power Dissipation (Maximum)	PD	190W
Drain-Source Capacitance		275pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		68nC

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