STW7NA100 MOSFET Transistor

The STW7NA100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STW7NA100 transistor as follows.

STW7NA100 Transistor Specification

Transistor Code		STW7NA100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.7Ohm
Power Dissipation (Maximum)	PD	190W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		3.75V
Total Gate Charge		125nC

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