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STW6NA80 MOSFET Transistor

The STW6NA80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STW6NA80 transistor as follows.

Circuit diagram symbol of the STW6NA80 transistor

STW6NA80 Transistor Specification

Transistor Code STW6NA80
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 5.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.2Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 140pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 100nS
Gate-Threshold Voltage (Maximum) 3.75V
Total Gate Charge 55nC

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