STW60NE10 MOSFET Transistor

The STW60NE10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STW60NE10 transistor as follows.

STW60NE10 Transistor Specification

Transistor Code		STW60NE10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		640pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		142nC

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