STW56N65M2-4 MOSFET Transistor

The STW56N65M2-4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STW56N65M2-4 transistor as follows.

STW56N65M2-4 Transistor Specification

Transistor Code		STW56N65M2-4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247-4
Transistor SMD Code		56N65M2
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	49A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.062Ohm
Power Dissipation (Maximum)	PD	358W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27.5nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		93nC

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