STW55NM50N MOSFET Transistor

The STW55NM50N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STW55NM50N transistor as follows.

STW55NM50N Transistor Specification

Transistor Code		STW55NM50N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Transistor SMD Code		55NM50N
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	54A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.054Ohm
Power Dissipation (Maximum)	PD	350W
Drain-Source Capacitance		370pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		180nC

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