STW3N170 MOSFET Transistor

The STW3N170 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STW3N170 transistor as follows.

STW3N170 Transistor Specification

Transistor Code		STW3N170
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Transistor SMD Code		3N170
Drain-Source Voltage (Maximum)	VDS	1700V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	12Ohm
Power Dissipation (Maximum)	PD	160W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		28nC

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