STW25NM50N MOSFET Transistor

The STW25NM50N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STW25NM50N transistor as follows.

STW25NM50N Transistor Specification

Transistor Code		STW25NM50N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Transistor SMD Code		W25NM50N
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.14Ohm
Power Dissipation (Maximum)	PD	160W
Drain-Source Capacitance		511pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		84nC

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