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STW19NM60N MOSFET Transistor

The STW19NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STW19NM60N transistor as follows.

Circuit diagram symbol of the STW19NM60N transistor

STW19NM60N Transistor Specification

Transistor Code STW19NM60N
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247
Transistor SMD Code 19NM60N
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.285Ohm
Power Dissipation (Maximum) PD 110W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 35nC

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