STV6NA60 MOSFET Transistor

The STV6NA60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STV6NA60 transistor as follows.

STV6NA60 Transistor Specification

Transistor Code		STV6NA60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO10
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	110W
Operating Junction Temperature (Maximum)		150°C

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