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STV200N55F3 MOSFET Transistor

The STV200N55F3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STV200N55F3 transistor as follows.

Circuit diagram symbol of the STV200N55F3 transistor

STV200N55F3 Transistor Specification

Transistor Code STV200N55F3
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWERSO-10
Transistor SMD Code 200N55F3
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 200A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0025Ohm
Power Dissipation (Maximum) PD 300W
Drain-Source Capacitance 1450pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 150nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 100nC

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