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STU13NM60N MOSFET Transistor

The STU13NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STU13NM60N transistor as follows.

Circuit diagram symbol of the STU13NM60N transistor

STU13NM60N Transistor Specification

Transistor Code STU13NM60N
Transistor Type MOSFET
Control Channel Type N-Channel
Package IPAK
Transistor SMD Code 13NM60N
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.36Ohm
Power Dissipation (Maximum) PD 90W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 27nC

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