STU11NM60ND MOSFET Transistor

The STU11NM60ND is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STU11NM60ND transistor as follows.

STU11NM60ND Transistor Specification

Transistor Code		STU11NM60ND
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		IPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	90W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		30nC

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