STT812A MOSFET Transistor

The STT812A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STT812A transistor as follows.

STT812A Transistor Specification

Transistor Code		STT812A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.569Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		21pF
Total Gate Charge		13nC

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