STT6602 MOSFET Transistor

The STT6602 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STT6602 transistor as follows.

STT6602 Transistor Specification

Transistor Code		STT6602
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TSOP6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.065Ohm
Power Dissipation (Maximum)	PD	1.14W
Drain-Source Capacitance		40(55)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.5(6)nS

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