STS9P2UH7 MOSFET Transistor

The STS9P2UH7 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STS9P2UH7 transistor as follows.

STS9P2UH7 Transistor Specification

Transistor Code		STS9P2UH7
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Transistor SMD Code		9L2U
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0225Ohm
Power Dissipation (Maximum)	PD	2.7W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30.5nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		22nC

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