STS8217 MOSFET Transistor

The STS8217 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STS8217 transistor as follows.

STS8217 Transistor Specification

Transistor Code		STS8217
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOT26
Drain-Source Voltage (Maximum)	VDS	24V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0165Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		188pF
Total Gate Charge		174nC

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