STS6409 MOSFET Transistor

The STS6409 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STS6409 transistor as follows.

STS6409 Transistor Specification

Transistor Code		STS6409
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOT26
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.049Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		159pF
Total Gate Charge		141nC

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