STS4DPFS30L MOSFET Transistor

The STS4DPFS30L is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STS4DPFS30L transistor as follows.

STS4DPFS30L Transistor Specification

Transistor Code		STS4DPFS30L
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Transistor SMD Code		4DFS30L
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		490pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		12.5nC

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