STS3P6F6 MOSFET Transistor

The STS3P6F6 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STS3P6F6 transistor as follows.

STS3P6F6 Transistor Specification

Transistor Code		STS3P6F6
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Transistor SMD Code		3K60
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	2.7W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.3nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		6.4nC

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