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STS3116E MOSFET Transistor

The STS3116E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STS3116E transistor as follows.

Circuit diagram symbol of the STS3116E transistor

STS3116E Transistor Specification

Transistor Code STS3116E
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT23
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 2.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.094Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 56pF
Total Gate Charge 33nC

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