STS1HNK60 MOSFET Transistor

The STS1HNK60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STS1HNK60 transistor as follows.

STS1HNK60 Transistor Specification

Transistor Code		STS1HNK60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Transistor SMD Code		S1HNK60
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8.5Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		23.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		3.7V
Total Gate Charge		7nC

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