STS10P3LLH6 MOSFET Transistor

The STS10P3LLH6 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STS10P3LLH6 transistor as follows.

STS10P3LLH6 Transistor Specification

Transistor Code		STS10P3LLH6
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Transistor SMD Code		10K3L
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	2.7W
Drain-Source Capacitance		414pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		112nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		33nC

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