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STS10N3LH5 MOSFET Transistor

The STS10N3LH5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STS10N3LH5 transistor as follows.

Circuit diagram symbol of the STS10N3LH5 transistor

STS10N3LH5 Transistor Specification

Transistor Code STS10N3LH5
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 22V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.021Ohm
Power Dissipation (Maximum) PD 2.5W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 1V

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