STRH100N6 MOSFET Transistor

The STRH100N6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STRH100N6 transistor as follows.

STRH100N6 Transistor Specification

Transistor Code		STRH100N6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-254AA
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0135Ohm
Power Dissipation (Maximum)	PD	176W
Drain-Source Capacitance		1080pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		115nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		134.4nC

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