STRH100N10 MOSFET Transistor

The STRH100N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STRH100N10 transistor as follows.

STRH100N10 Transistor Specification

Transistor Code		STRH100N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-254AA
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	48A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	170W
Drain-Source Capacitance		679pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		135nC

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