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STQ1NK60ZR-AP MOSFET Transistor

The STQ1NK60ZR-AP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STQ1NK60ZR-AP transistor as follows.

Circuit diagram symbol of the STQ1NK60ZR-AP transistor

STQ1NK60ZR-AP Transistor Specification

Transistor Code STQ1NK60ZR-AP
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-92
Transistor SMD Code 1NK60ZR
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 0.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 13Ohm
Power Dissipation (Maximum) PD 3W
Drain-Source Capacitance 17.6pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5nS

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