STQ1HN60K3-AP MOSFET Transistor

The STQ1HN60K3-AP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STQ1HN60K3-AP transistor as follows.

STQ1HN60K3-AP Transistor Specification

Transistor Code		STQ1HN60K3-AP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-92
Transistor SMD Code		1HN60K3
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		13pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		9.5nC

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