STP9NB50 MOSFET Transistor

The STP9NB50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP9NB50 transistor as follows.

STP9NB50 Transistor Specification

Transistor Code		STP9NB50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.85Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		175pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS

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