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STP8NM60 MOSFET Transistor

The STP8NM60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP8NM60 transistor as follows.

Circuit diagram symbol of the STP8NM60 transistor

STP8NM60 Transistor Specification

Transistor Code STP8NM60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220FP
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 1Ohm
Power Dissipation (Maximum) PD 30W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 5V

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