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STP8NM50N MOSFET Transistor

The STP8NM50N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP8NM50N transistor as follows.

Circuit diagram symbol of the STP8NM50N transistor

STP8NM50N Transistor Specification

Transistor Code STP8NM50N
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.79Ohm
Power Dissipation (Maximum) PD 20W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V

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