STP80N70F6 MOSFET Transistor

The STP80N70F6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP80N70F6 transistor as follows.

STP80N70F6 Transistor Specification

Transistor Code		STP80N70F6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		80N70F6
Drain-Source Voltage (Maximum)	VDS	68V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	96A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		341pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		29nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		99nC

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