STP7NB60 MOSFET Transistor

The STP7NB60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP7NB60 transistor as follows.

STP7NB60 Transistor Specification

Transistor Code		STP7NB60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		P7NB60
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		165pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		30nC

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