STP7N60M2 MOSFET Transistor

The STP7N60M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP7N60M2 transistor as follows.

STP7N60M2 Transistor Specification

Transistor Code		STP7N60M2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		7N60M2
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.95Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		15.7pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.2nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		8.8nC

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