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STP6NA80 MOSFET Transistor

The STP6NA80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP6NA80 transistor as follows.

Circuit diagram symbol of the STP6NA80 transistor

STP6NA80 Transistor Specification

Transistor Code STP6NA80
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 800V
Drain Current (Maximum) ID 5.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.9Ohm
Power Dissipation (Maximum) PD 125W
Operating Junction Temperature (Maximum) 150°C

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