STP6N65M2 MOSFET Transistor

The STP6N65M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP6N65M2 transistor as follows.

STP6N65M2 Transistor Specification

Transistor Code		STP6N65M2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		6N65M2
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.35Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		12.8pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		9.8nC

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