STP6N60FI MOSFET Transistor

The STP6N60FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP6N60FI transistor as follows.

STP6N60FI Transistor Specification

Transistor Code		STP6N60FI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT220
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	3.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	40W
Operating Junction Temperature (Maximum)		150°C

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