STP6N25FI MOSFET Transistor

The STP6N25FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP6N25FI transistor as follows.

STP6N25FI Transistor Specification

Transistor Code		STP6N25FI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT220
Drain-Source Voltage (Maximum)	VDS	250V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	35W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		20nC

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