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STP60N55F3 MOSFET Transistor

The STP60N55F3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP60N55F3 transistor as follows.

Circuit diagram symbol of the STP60N55F3 transistor

STP60N55F3 Transistor Specification

Transistor Code STP60N55F3
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 65A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0085Ohm
Power Dissipation (Maximum) PD 110W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 33.5nC

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