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STP601D MOSFET Transistor

The STP601D is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP601D transistor as follows.

Circuit diagram symbol of the STP601D transistor

STP601D Transistor Specification

Transistor Code STP601D
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-251_TO-252
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 30A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.03Ohm
Power Dissipation (Maximum) PD 60W
Drain-Source Capacitance 240pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 58nC

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