STP5N80XI MOSFET Transistor

The STP5N80XI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP5N80XI transistor as follows.

STP5N80XI Transistor Specification

Transistor Code		STP5N80XI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT221
Drain-Source Voltage (Maximum)	VDS	800V
Drain Current (Maximum)	ID	2.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.4Ohm
Power Dissipation (Maximum)	PD	35W
Operating Junction Temperature (Maximum)		150°C

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